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AUIRLS4030-7TRL

MOSFET N-CH 100V 190A D2PAK-7P


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-AUIRLS4030-7TRL
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 325
  • Description: MOSFET N-CH 100V 190A D2PAK-7P (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series Automotive, AEC-Q101, HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 370W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.9m Ω @ 110A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11490pF @ 50V
Current - Continuous Drain (Id) @ 25°C 190A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 4.5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Drain Current-Max (Abs) (ID) 190A
Drain-source On Resistance-Max 0.0039Ohm
Pulsed Drain Current-Max (IDM) 750A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 320 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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