Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount, Through Hole |
Mounting Type | Surface Mount |
Package / Case | DO-214AB, SMC |
Number of Pins | 2 |
Weight | 210.013267mg |
Diode Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 2014 |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Max Operating Temperature | 125°C |
Min Operating Temperature | -55°C |
Additional Feature | FREE WHEELING DIODE, LOW POWER LOSS |
HTS Code | 8541.10.00.80 |
Capacitance | 250pF |
Subcategory | Rectifier Diodes |
Voltage - Rated DC | 50V |
Terminal Position | DUAL |
Terminal Form | C BEND |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 3A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | B350 |
Pin Count | 2 |
Number of Elements | 1 |
Polarity | Standard |
Voltage | 50V |
Element Configuration | Single |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Current | 3A |
Diode Type | Schottky |
Current - Reverse Leakage @ Vr | 500μA @ 50V |
Output Current | 3A |
Voltage - Forward (Vf) (Max) @ If | 700mV @ 3A |
Forward Current | 3A |
Operating Temperature - Junction | -55°C~125°C |
Application | EFFICIENCY |
Forward Voltage | 700mV |
Max Reverse Voltage (DC) | 50V |
Average Rectified Current | 3A |
Number of Phases | 1 |
Reverse Recovery Time | 26 ns |
Peak Reverse Current | 500μA |
Max Repetitive Reverse Voltage (Vrrm) | 50V |
Capacitance @ Vr, F | 200pF @ 4V 1MHz |
Peak Non-Repetitive Surge Current | 100A |
Max Forward Surge Current (Ifsm) | 100A |
Height | 2.5mm |
Length | 7.11mm |
Width | 6.22mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |