BAP55LX,315
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Package / Case | 2-XDFN |
| Surface Mount | YES |
| Diode Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.10.00.70 |
| Subcategory | PIN Diodes |
| Technology | POSITIVE-INTRINSIC-NEGATIVE |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BAP55 |
| Pin Count | 2 |
| JESD-30 Code | R-PDSO-N2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 135mW |
| Diode Type | PIN - Single |
| Application | ATTENUATOR; SWITCHING |
| Current - Max | 100mA |
| Capacitance @ Vr, F | 0.28pF @ 20V 1MHz |
| Voltage - Peak Reverse (Max) | 50V |
| Breakdown Voltage-Min | 50V |
| Reverse Test Voltage | 20V |
| Frequency Band | S B |
| Diode Capacitance-Nom | 0.28pF |
| Resistance @ If, F | 800mOhm @ 100mA 100MHz |
| Diode Capacitance-Max | 0.28pF |
| Minority Carrier Lifetime-Nom | 0.27 µs |
| Diode Res Test Current | 0.5mA |
| Diode Res Test Frequency | 100MHz |
| Diode Forward Resistance-Max | 4.5Ohm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
