BAP70AM,115
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Diode Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW DISTORTION |
| HTS Code | 8541.10.00.70 |
| Subcategory | Other Diodes |
| Technology | POSITIVE-INTRINSIC-NEGATIVE |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BAP70A |
| Pin Count | 6 |
| JESD-30 Code | R-PDSO-G6 |
| Qualification Status | Not Qualified |
| Number of Elements | 4 |
| Configuration | 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
| Power Dissipation-Max | 300mW |
| Diode Type | PIN - 2 Pair Series |
| Application | ATTENUATOR |
| Current - Max | 100mA |
| Capacitance @ Vr, F | 0.25pF @ 20V 1MHz |
| Forward Voltage-Max | 1.1V |
| Reverse Current-Max | 0.1μA |
| Voltage - Peak Reverse (Max) | 50V |
| Reverse Test Voltage | 50V |
| Resistance @ If, F | 1.9Ohm @ 100mA 100MHz |
| Diode Capacitance-Max | 0.25pF |
| Minority Carrier Lifetime-Nom | 1.25 µs |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
