Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Weight | 7.994566mg |
Diode Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 2003 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Max Operating Temperature | 150°C |
Min Operating Temperature | -65°C |
Additional Feature | LOW LEAKAGE CURRENT |
HTS Code | 8541.10.00.70 |
Capacitance | 2pF |
Subcategory | Rectifier Diodes |
Power Rating | 250mW |
Voltage - Rated DC | 85V |
Max Power Dissipation | 150mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 215mA |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | BAS116 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Diode Type | Standard |
Current - Reverse Leakage @ Vr | 5nA @ 75V |
Power Dissipation | 250mW |
Output Current | 250mA |
Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA |
Forward Current | 150mA |
Operating Temperature - Junction | -65°C~150°C |
Max Surge Current | 4A |
Current - Average Rectified (Io) | 215mA DC |
Forward Voltage | 1.25V |
Max Reverse Voltage (DC) | 85V |
Average Rectified Current | 215mA |
Reverse Recovery Time | 3 μs |
Peak Reverse Current | 5nA |
Max Repetitive Reverse Voltage (Vrrm) | 85V |
Capacitance @ Vr, F | 2pF @ 0V 1MHz |
Peak Non-Repetitive Surge Current | 4A |
Max Forward Surge Current (Ifsm) | 4A |
Recovery Time | 3 μs |
Reverse Voltage (DC) | 85V |
Height | 1mm |
Length | 3.05mm |
Width | 1.4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |