BAS16LD,315
| Parameters | |
|---|---|
| Max Reverse Voltage (DC) | 100V |
| Average Rectified Current | 215mA |
| Reverse Recovery Time | 4 ns |
| Peak Reverse Current | 500nA |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Capacitance @ Vr, F | 1.5pF @ 0V 1MHz |
| Peak Non-Repetitive Surge Current | 4A |
| Reverse Voltage | 100V |
| Max Forward Surge Current (Ifsm) | 500mA |
| Recovery Time | 4 ns |
| Max Junction Temperature (Tj) | 150°C |
| Ambient Temperature Range High | 150°C |
| Height | 400μm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 2-XDFN |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | Automotive, AEC-Q101, BAS16 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Capacitance | 1.5pF |
| Max Power Dissipation | 250mW |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | BAS16L |
| Pin Count | 2 |
| Reference Standard | AEC-Q101; IEC-60134 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 500nA @ 80V |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA |
| Forward Current | 215mA |
| Operating Temperature - Junction | 150°C Max |
| Max Surge Current | 4A |
| Current - Average Rectified (Io) | 215mA DC |
| Forward Voltage | 1.25V |
See Relate Datesheet
