BAS21LT1G
| Parameters | |
|---|---|
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Diode Element Material | SILICON |
| Packaging | Cut Tape (CT) |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.70 |
| Capacitance | 5pF |
| Subcategory | Rectifier Diodes |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 200mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BAS21L |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Dual |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 100nA @ 200V |
| Power Dissipation | 385mW |
| Output Current | 200mA |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 200mA |
| Forward Current | 200mA |
| Max Reverse Leakage Current | 100nA |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 625mA |
| Halogen Free | Halogen Free |
| Breakdown Voltage | 250V |
| Current - Average Rectified (Io) | 200mA DC |
| Forward Voltage | 1.25V |
| Max Reverse Voltage (DC) | 250V |
| Average Rectified Current | 200mA |
| Reverse Recovery Time | 50 ns |
| Peak Reverse Current | 100nA |
| Max Repetitive Reverse Voltage (Vrrm) | 250V |
| Capacitance @ Vr, F | 5pF @ 0V 1MHz |
| Peak Non-Repetitive Surge Current | 625mA |
| Max Forward Surge Current (Ifsm) | 625mA |
| Recovery Time | 50 ns |
| Height | 940μm |
| Length | 2.9mm |
See Relate Datesheet
