BAS32L,135
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DO-213AC, MINI-MELF, SOD-80 |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| HTS Code | 8541.10.00.70 |
| Terminal Position | END |
| Terminal Form | WRAP AROUND |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | BAS32 |
| Pin Count | 2 |
| Reference Standard | IEC-60134 |
| Number of Elements | 1 |
| Power Dissipation-Max | 0.5W |
| Element Configuration | Single |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 5μA @ 75V |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 100mA |
| Case Connection | ISOLATED |
| Forward Current | 200mA |
| Max Reverse Leakage Current | 5μA |
| Operating Temperature - Junction | 200°C Max |
| Max Surge Current | 4A |
| Current - Average Rectified (Io) | 200mA DC |
| Forward Voltage | 1V |
| Max Reverse Voltage (DC) | 75V |
| Average Rectified Current | 200mA |
| Reverse Recovery Time | 4 ns |
| Max Repetitive Reverse Voltage (Vrrm) | 100V |
| Capacitance @ Vr, F | 2pF @ 0V 1MHz |
| Peak Non-Repetitive Surge Current | 4A |
| Recovery Time | 4 ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
