BAS40LT1G
| Parameters | |
|---|---|
| Peak Non-Repetitive Surge Current | 600mA |
| Max Forward Surge Current (Ifsm) | 200mA |
| Height | 1.01mm |
| Length | 3.04mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Diode Element Material | SILICON |
| Packaging | Cut Tape (CT) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| HTS Code | 8541.10.00.70 |
| Capacitance | 5pF |
| Subcategory | Rectifier Diodes |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 5A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BAS40L |
| Pin Count | 3 |
| Number of Elements | 1 |
| Polarity | Standard |
| Element Configuration | Single |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 1μA @ 25V |
| Power Dissipation | 225mW |
| Output Current | 120mA |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 40mA |
| Forward Current | 120mA |
| Max Reverse Leakage Current | 1μA |
| Operating Temperature - Junction | -55°C~150°C |
| Max Surge Current | 600mA |
| Halogen Free | Halogen Free |
| Breakdown Voltage | 40V |
| Current - Average Rectified (Io) | 120mA DC |
| Forward Voltage | 1V |
| Max Reverse Voltage (DC) | 40V |
| Average Rectified Current | 120mA |
| Peak Reverse Current | 1μA |
| Max Repetitive Reverse Voltage (Vrrm) | 40V |
| Capacitance @ Vr, F | 5pF @ 1V 1MHz |
See Relate Datesheet
