BAS45A,133
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | DO-204AG, DO-34, Axial |
| Surface Mount | NO |
| Diode Element Material | SILICON |
| Packaging | Tape & Box (TB) |
| Published | 1996 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW LEAKAGE CURRENT |
| HTS Code | 8541.10.00.70 |
| Terminal Form | WIRE |
| Base Part Number | BAS45 |
| Pin Count | 2 |
| JESD-30 Code | O-LALF-W2 |
| Operating Temperature (Max) | 175°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation-Max | 0.3W |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 1nA @ 125V |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 100mA |
| Case Connection | ISOLATED |
| Operating Temperature - Junction | 175°C Max |
| Output Current-Max | 0.25A |
| Voltage - DC Reverse (Vr) (Max) | 125V |
| Current - Average Rectified (Io) | 250mA DC |
| Reverse Recovery Time | 1.5μs |
| Rep Pk Reverse Voltage-Max | 125V |
| Capacitance @ Vr, F | 4pF @ 0V 1MHz |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
