Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-523 |
Number of Pins | 2 |
Weight | 2.012816mg |
Diode Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 1999 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Max Operating Temperature | 150°C |
Min Operating Temperature | -65°C |
Additional Feature | HIGH RELIABILITY |
HTS Code | 8541.10.00.70 |
Capacitance | 2pF |
Subcategory | Rectifier Diodes |
Power Rating | 150mW |
Voltage - Rated DC | 85V |
Max Power Dissipation | 150mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 215mA |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | BAV199T |
Pin Count | 3 |
JESD-30 Code | R-PDSO-G3 |
Number of Elements | 2 |
Speed | Small Signal =< 200mA (Io), Any Speed |
Diode Type | Standard |
Current - Reverse Leakage @ Vr | 5nA @ 75V |
Power Dissipation | 150mW |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 50mA |
Forward Current | 125mA |
Operating Temperature - Junction | -65°C~150°C |
Max Surge Current | 4A |
Current - Average Rectified (Io) | 125mA DC |
Forward Voltage | 1.25V |
Max Reverse Voltage (DC) | 85V |
Average Rectified Current | 125mA |
Reverse Recovery Time | 3 μs |
Peak Reverse Current | 5nA |
Max Repetitive Reverse Voltage (Vrrm) | 85V |
Peak Non-Repetitive Surge Current | 4A |
Reverse Voltage | 85V |
Diode Configuration | 1 Pair Series Connection |
Max Forward Surge Current (Ifsm) | 500mA |
Recovery Time | 3 μs |
Max Junction Temperature (Tj) | 150°C |
Reverse Voltage (DC) | 85V |
Height | 900μm |
Length | 1.6mm |
Width | 800μm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |