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BBS3002-TL-1E

MOSFET P-CH 60V 100A


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-BBS3002-TL-1E
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 222
  • Description: MOSFET P-CH 60V 100A (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 2
Weight 2.084002g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 90W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 90W
Case Connection DRAIN
Turn On Delay Time 95 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 5.8m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 13200pF @ 20V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Gate Charge (Qg) (Max) @ Vgs 280nC @ 10V
Rise Time 1μs
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 820 ns
Turn-Off Delay Time 800 ns
Continuous Drain Current (ID) -100A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.009Ohm
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 340 mJ
Max Junction Temperature (Tj) 150°C
Height 5.08mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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