Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Package / Case | TO-18-3 |
Transistor Element Material | SILICON |
Packaging | Bulk |
Published | 2012 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Active |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
JESD-30 Code | O-MBCY-W3 |
Operating Temperature (Min) | -65°C |
Number of Elements | 1 |
Polarity | NPN |
Configuration | SINGLE |
Power Dissipation-Max | 600mW |
Transistor Application | AMPLIFIER |
Collector Emitter Voltage (VCEO) | 600mV |
Max Collector Current | 200mA |
Collector Emitter Breakdown Voltage | 45V |
Transition Frequency | 150MHz |
Frequency - Transition | 150MHz |
DC Current Gain-Min (hFE) | 110 |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |