Parameters | |
---|---|
Subcategory | Other Transistors |
Voltage - Rated DC | 50V |
Max Power Dissipation | 350mW |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | 100mA |
Frequency | 150MHz |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | BC182 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 350mW |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 200MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 50V |
Max Collector Current | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA 5V |
Current - Collector Cutoff (Max) | 15nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
Collector Emitter Breakdown Voltage | 50V |
Transition Frequency | 200MHz |
Collector Emitter Saturation Voltage | 200mV |
Max Breakdown Voltage | 50V |
Collector Base Voltage (VCBO) | 60V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 40 |
Height | 5.33mm |
Length | 5.2mm |
Width | 4.19mm |
REACH SVHC | No SVHC |
RoHS Status | Non-RoHS Compliant |
Lead Free | Lead Free |
Lifecycle Status | OBSOLETE (Last Updated: 5 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins | 3 |
Weight | 200mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2005 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |