Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins | 3 |
Weight | 179mg |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Bulk |
Published | 2007 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | -45V |
Max Power Dissipation | 625mW |
Terminal Position | BOTTOM |
Current Rating | -800mA |
Frequency | 100MHz |
Base Part Number | BC327 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1.5W |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 260MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | -45V |
Max Collector Current | -800mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA 1V |
Current - Collector Cutoff (Max) | 100nA |
Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
Collector Emitter Breakdown Voltage | -45V |
Current - Collector (Ic) (Max) | 800mA |
Transition Frequency | 100MHz |
Collector Emitter Saturation Voltage | -700mV |
Max Breakdown Voltage | 45V |
Emitter Base Voltage (VEBO) | -5V |
hFE Min | 40 |
Max Junction Temperature (Tj) | 150°C |
Height | 5.33mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |