Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Box (TB) |
Published | 2005 |
JESD-609 Code | e0 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Additional Feature | EUROPEAN PART NUMBER |
HTS Code | 8541.21.00.95 |
Subcategory | Other Transistors |
Voltage - Rated DC | -20V |
Max Power Dissipation | 625mW |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | -1A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | BC369 |
Pin Count | 3 |
JESD-30 Code | O-PBCY-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power - Max | 625mW |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 56MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 500mV |
Max Collector Current | 1A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA 1V |
Current - Collector Cutoff (Max) | 10μA ICBO |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
Collector Emitter Breakdown Voltage | 20V |
Transition Frequency | 65MHz |
Collector Emitter Saturation Voltage | 500mV |
Frequency - Transition | 65MHz |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 50 |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |