Parameters | |
---|---|
Lifecycle Status | OBSOLETE (Last Updated: 1 day ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins | 3 |
Weight | 200mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2006 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
Terminal Finish | Tin/Lead (Sn/Pb) |
Subcategory | Other Transistors |
Voltage - Rated DC | 30V |
Max Power Dissipation | 625mW |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 240 |
Current Rating | 1.2A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | BC517 |
Pin Count | 3 |
Number of Elements | 1 |
Polarity | NPN |
Element Configuration | Single |
Power Dissipation | 625mW |
Transistor Application | AMPLIFIER |
Transistor Type | NPN - Darlington |
Collector Emitter Voltage (VCEO) | 30V |
Max Collector Current | 1A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30000 @ 20mA 2V |
Current - Collector Cutoff (Max) | 500nA |
Vce Saturation (Max) @ Ib, Ic | 1V @ 100μA, 100mA |
Collector Emitter Breakdown Voltage | 30V |
Transition Frequency | 200MHz |
Collector Emitter Saturation Voltage | 1V |
Max Breakdown Voltage | 30V |
Frequency - Transition | 200MHz |
Collector Base Voltage (VCBO) | 40V |
Emitter Base Voltage (VEBO) | 10V |
hFE Min | 30000 |
Continuous Collector Current | 1.2A |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | Non-RoHS Compliant |
Lead Free | Lead Free |