Parameters | |
---|---|
Emitter Base Voltage (VEBO) | 10V |
hFE Min | 30000 |
Continuous Collector Current | 1.2A |
Height | 5.33mm |
Length | 5.2mm |
Width | 4.19mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Contact Plating | Copper, Silver, Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Number of Pins | 3 |
Weight | 286mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Box (TB) |
Published | 2012 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Subcategory | Other Transistors |
Voltage - Rated DC | 30V |
Max Power Dissipation | 625mW |
Terminal Position | BOTTOM |
Current Rating | 1.2A |
Base Part Number | BC517 |
Number of Elements | 1 |
Polarity | NPN |
Element Configuration | Single |
Transistor Type | NPN - Darlington |
Collector Emitter Voltage (VCEO) | 30V |
Max Collector Current | 1.2A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30000 @ 20mA 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1V @ 100μA, 100mA |
Collector Emitter Breakdown Voltage | 30V |
Collector Emitter Saturation Voltage | 1V |
Max Breakdown Voltage | 30V |
Collector Base Voltage (VCBO) | 40V |