Parameters | |
---|---|
Max Power Dissipation | 625mW |
Terminal Position | BOTTOM |
Frequency | 200MHz |
Base Part Number | BC637 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 625mW |
Gain Bandwidth Product | 200MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 60V |
Max Collector Current | 1A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Collector Emitter Breakdown Voltage | 60V |
Transition Frequency | 200MHz |
Collector Base Voltage (VCBO) | 60V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 25 |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 4 days ago) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |