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BC638G

BC638G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-BC638G
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 537
  • Description: BC638G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
Frequency 150MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC638
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
See Relate Datesheet

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