Parameters | |
---|---|
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Collector Emitter Breakdown Voltage | 80V |
Transition Frequency | 100MHz |
Collector Emitter Saturation Voltage | 500mV |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 100 |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins | 3 |
Weight | 201mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | 80V |
Max Power Dissipation | 1W |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 1A |
Frequency | 100MHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | BC639 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1W |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 100MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 80V |
Max Collector Current | 1A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |