Parameters | |
---|---|
Collector Emitter Breakdown Voltage | 80V |
Transition Frequency | 150MHz |
Collector Emitter Saturation Voltage | -500mV |
Max Breakdown Voltage | 80V |
Collector Base Voltage (VCBO) | -80V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 25 |
REACH SVHC | No SVHC |
RoHS Status | Non-RoHS Compliant |
Lead Free | Lead Free |
Lifecycle Status | OBSOLETE (Last Updated: 3 days ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins | 3 |
Weight | 200.998119mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2005 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | -80V |
Max Power Dissipation | 625mW |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | -1A |
Frequency | 100MHz |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | BC640 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Voltage | 80V |
Element Configuration | Single |
Current | 1A |
Power Dissipation | 1W |
Power - Max | 625mW |
Gain Bandwidth Product | 150MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 80V |
Max Collector Current | 500mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |