Parameters | |
---|---|
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 200mA, 2A |
Collector Emitter Breakdown Voltage | 20V |
Transition Frequency | 170MHz |
Max Breakdown Voltage | 20V |
Frequency - Transition | 170MHz |
Collector Base Voltage (VCBO) | 32V |
Emitter Base Voltage (VEBO) | 5V |
RoHS Status | ROHS3 Compliant |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 3-UDFN Exposed Pad |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2014 |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Max Power Dissipation | 420mW |
Terminal Position | DUAL |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Reference Standard | AEC-Q101; IEC-60134 |
JESD-30 Code | S-PDSO-N3 |
Number of Elements | 1 |
Configuration | SINGLE |
Case Connection | COLLECTOR |
Power - Max | 420mW |
Transistor Application | SWITCHING |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 600mV |
Max Collector Current | 2A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA 1V |