Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 3-XFDFN |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
JESD-609 Code | e4 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Max Power Dissipation | 435mW |
Terminal Position | BOTTOM |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Gain Bandwidth Product | 300MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 300mV |
Max Collector Current | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 5V |
Current - Collector Cutoff (Max) | 15nA |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA |
Collector Emitter Breakdown Voltage | 45V |
Transition Frequency | 180MHz |
Collector Emitter Saturation Voltage | 200mV |
Max Breakdown Voltage | 45V |
Frequency - Transition | 100MHz |
Collector Base Voltage (VCBO) | 50V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 200 |
Continuous Collector Current | 100mA |
RoHS Status | ROHS3 Compliant |