Parameters | |
---|---|
Max Collector Current | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 5V |
Current - Collector Cutoff (Max) | 15nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 500μA, 10mA |
Collector Emitter Breakdown Voltage | 45V |
Transition Frequency | 100MHz |
Collector Emitter Saturation Voltage | 300mV |
Max Breakdown Voltage | 45V |
Collector Base Voltage (VCBO) | 50V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 200 |
Continuous Collector Current | 100mA |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-XFDFN Exposed Pad |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2014 |
Series | Automotive, AEC-Q101 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Max Power Dissipation | 350mW |
Terminal Position | DUAL |
Terminal Form | NO LEAD |
Pin Count | 6 |
Reference Standard | AEC-Q101; IEC-60134 |
JESD-30 Code | R-PDSO-N6 |
Number of Elements | 2 |
Polarity | NPN, PNP |
Configuration | SEPARATE, 2 ELEMENTS |
Case Connection | COLLECTOR |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 100MHz |
Transistor Type | NPN, PNP |
Collector Emitter Voltage (VCEO) | 45V |