BC847QASZ
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-XFDFN Exposed Pad |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2015 |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Max Power Dissipation | 350mW |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 6 |
| Reference Standard | AEC-Q101; IEC-60134 |
| JESD-30 Code | R-PDSO-N6 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS |
| Case Connection | COLLECTOR |
| Power - Max | 350mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | 2 NPN (Dual) |
| Collector Emitter Voltage (VCEO) | 300mV |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 15nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 45V |
| Frequency - Transition | 100MHz |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 6V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
