Parameters | |
---|---|
Power Dissipation-Max (Abs) | 0.35W |
VCEsat-Max | 0.3 V |
Collector-Base Capacitance-Max | 3pF |
RoHS Status | ROHS3 Compliant |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2002 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
HTS Code | 8541.21.00.75 |
Subcategory | Other Transistors |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 10 |
Pin Count | 3 |
JESD-30 Code | R-PDSO-G3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Power - Max | 350mW |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA 5V |
Current - Collector Cutoff (Max) | 15μA ICBO |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Current - Collector (Ic) (Max) | 100mA |
Transition Frequency | 200MHz |
Frequency - Transition | 200MHz |