Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Series | Automotive, AEC-Q101 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Max Power Dissipation | 300mW |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Frequency | 100MHz |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 6 |
JESD-30 Code | R-PDSO-G6 |
Number of Elements | 2 |
Polarity | NPN, PNP |
Element Configuration | Dual |
Power Dissipation | 300mW |
Forward Current | 70mA |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 100MHz |
Forward Voltage | 410mV |
Transistor Type | 2 PNP (Dual) |
Collector Emitter Voltage (VCEO) | 65V |
Max Collector Current | 100mA |
Max Repetitive Reverse Voltage (Vrrm) | 70V |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 5V |
Current - Collector Cutoff (Max) | 15nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA |
Collector Emitter Breakdown Voltage | 65V |
Transition Frequency | 100MHz |
Max Breakdown Voltage | 65V |
Collector Base Voltage (VCBO) | 80V |
Emitter Base Voltage (VEBO) | 6V |
Max Forward Surge Current (Ifsm) | 100mA |
hFE Min | 290 |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |