Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Weight | 7.994566mg |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2008 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Max Power Dissipation | 300mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Frequency | 200MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | BC857B |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 310mW |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 200MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | -45V |
Max Collector Current | -100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA 5V |
Current - Collector Cutoff (Max) | 15nA |
Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
Collector Emitter Breakdown Voltage | -45V |
Current - Collector (Ic) (Max) | 100mA |
Transition Frequency | 200MHz |
Collector Emitter Saturation Voltage | -250mV |
Max Breakdown Voltage | 45V |
Collector Base Voltage (VCBO) | -50V |
Emitter Base Voltage (VEBO) | -5V |
hFE Min | 220 |
Max Junction Temperature (Tj) | 150°C |
Height | 1.1mm |
Length | 3.05mm |
Width | 1.4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |