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BCP5516H6327XTSA1

BCP5516H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BCP5516H6327XTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 940
  • Description: BCP5516H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Base Part Number BCP55
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 2W
Transistor Application AMPLIFIER
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 60V
RoHS Status ROHS3 Compliant
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
See Relate Datesheet

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