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BCP55H6327XTSA1

BCP55H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BCP55H6327XTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 571
  • Description: BCP55H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Frequency 100MHz
Base Part Number BCP55
Number of Elements 1
Configuration SINGLE
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Current - Collector (Ic) (Max) 1A
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Height 1.6mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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