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BCP6925E6327HTSA1

BCP6925E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BCP6925E6327HTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 635
  • Description: BCP6925E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 20V
Current - Collector (Ic) (Max) 1A
Transition Frequency 100MHz
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 5V
RoHS Status RoHS Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCP69
Number of Elements 1
Configuration SINGLE
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
See Relate Datesheet

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