Parameters | |
---|---|
Max Breakdown Voltage | 20V |
Collector Base Voltage (VCBO) | 25V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 50 |
Height | 1.651mm |
Length | 6.6802mm |
Width | 3.7084mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Surface Mount | YES |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2008 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | -20V |
Max Power Dissipation | 1.5W |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -1A |
Frequency | 60MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | BCP69 |
Pin Count | 4 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1.5W |
Case Connection | COLLECTOR |
Gain Bandwidth Product | 60MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 20V |
Max Collector Current | 1A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA 1V |
Current - Collector Cutoff (Max) | 10μA ICBO |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
Collector Emitter Breakdown Voltage | -20V |
Transition Frequency | 60MHz |
Collector Emitter Saturation Voltage | -500mV |