Parameters | |
---|---|
DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA 5V |
Current - Collector Cutoff (Max) | 15nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
Collector Emitter Breakdown Voltage | 30V |
Transition Frequency | 250MHz |
Collector Emitter Saturation Voltage | 650mV |
Max Breakdown Voltage | 30V |
Collector Base Voltage (VCBO) | 30V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 125 |
Height | 1mm |
Length | 2.9mm |
Width | 2.9mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-253-4, TO-253AA |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2001 |
JESD-609 Code | e3 |
Part Status | Last Time Buy |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Voltage - Rated DC | -30V |
Max Power Dissipation | 300mW |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | -100mA |
Frequency | 250MHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | BCV62 |
Reference Standard | AEC-Q101 |
Number of Elements | 2 |
Polarity | PNP |
Element Configuration | Dual |
Power Dissipation | 300mW |
Halogen Free | Not Halogen Free |
Transistor Type | 2 PNP (Dual) |
Collector Emitter Voltage (VCEO) | 650mV |
Max Collector Current | 100mA |