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BCW60DE6327HTSA1

BCW60DE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BCW60DE6327HTSA1
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 739
  • Description: BCW60DE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Collector Emitter Breakdown Voltage 32V
Transition Frequency 250MHz
Max Breakdown Voltage 32V
Collector Base Voltage (VCBO) 32V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 32V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 100mA
Frequency 250MHz
Base Part Number BCW60
Number of Elements 1
Configuration SINGLE
Power Dissipation 330mW
Transistor Application SWITCHING
Halogen Free Not Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 550mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 380 @ 2mA 5V
See Relate Datesheet

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