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BCW61AE6327HTSA1

BCW61AE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BCW61AE6327HTSA1
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 882
  • Description: BCW61AE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC -32V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCW61
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power - Max 330mW
Transistor Application SWITCHING
Halogen Free Not Halogen Free
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 550mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Collector Emitter Breakdown Voltage 32V
Transition Frequency 250MHz
Frequency - Transition 250MHz
Collector Base Voltage (VCBO) 32V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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