Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Contact Plating | Tin |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Surface Mount | NO |
Number of Pins | 3 |
Weight | 4.535924g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2001 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | 60V |
Max Power Dissipation | 1.25W |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 6A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | BD137 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 65W |
Power - Max | 1.25W |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 60V |
Max Collector Current | 1.5A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Collector Emitter Breakdown Voltage | 60V |
Collector Emitter Saturation Voltage | 500mV |
Collector Base Voltage (VCBO) | 60V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 25 |
Height | 11.04mm |
Length | 7.74mm |
Width | 2.66mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |