Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 weeks ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Weight | 761mg |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Published | 2000 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | 45V |
Max Power Dissipation | 30W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 3A |
Frequency | 3MHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 30W |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 3MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 45V |
Max Collector Current | 3A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 2V |
Current - Collector Cutoff (Max) | 100μA ICBO |
Vce Saturation (Max) @ Ib, Ic | 800mV @ 100mA, 1A |
Collector Emitter Breakdown Voltage | 80V |
Transition Frequency | 3MHz |
Collector Emitter Saturation Voltage | 800mV |
Max Breakdown Voltage | 45V |
Collector Base Voltage (VCBO) | 45V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 40 |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |