Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Bulk |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -80V |
Max Power Dissipation | 30W |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -3A |
Frequency | 3MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | BD180 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 30W |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 3MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 80V |
Max Collector Current | 1A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA 2V |
Current - Collector Cutoff (Max) | 1mA ICBO |
Vce Saturation (Max) @ Ib, Ic | 800mV @ 100mA, 1A |
Collector Emitter Breakdown Voltage | 80V |
Transition Frequency | 3MHz |
Collector Emitter Saturation Voltage | 800mV |
Collector Base Voltage (VCBO) | 80V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 15 |
Height | 11.04mm |
Length | 7.74mm |
Width | 2.66mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |