Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | LIFETIME (Last Updated: 1 week ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Number of Pins | 3 |
Weight | 761mg |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Published | 2000 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | -80V |
Max Power Dissipation | 25W |
Current Rating | -2A |
Frequency | 3MHz |
Base Part Number | BD238 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 25W |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 3MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 80V |
Max Collector Current | 2A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A 2V |
Current - Collector Cutoff (Max) | 100μA ICBO |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
Collector Emitter Breakdown Voltage | 80V |
Transition Frequency | 3MHz |
Collector Emitter Saturation Voltage | -600mV |
Max Breakdown Voltage | 100V |
Collector Base Voltage (VCBO) | -100V |
Emitter Base Voltage (VEBO) | -5V |
hFE Min | 25 |
Height | 11mm |
Length | 8mm |
Width | 3.25mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |