Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | LIFETIME (Last Updated: 1 week ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Number of Pins | 3 |
Weight | 760.986249mg |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
Published | 2017 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | 32V |
Max Power Dissipation | 36W |
Current Rating | 4A |
Frequency | 3MHz |
Base Part Number | BD435 |
Number of Elements | 1 |
Voltage | 32V |
Element Configuration | Single |
Current | 4A |
Power Dissipation | 36W |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 3MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 32V |
Max Collector Current | 4A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA 5V |
Current - Collector Cutoff (Max) | 100μA |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
Collector Emitter Breakdown Voltage | 32V |
Transition Frequency | 3MHz |
Collector Emitter Saturation Voltage | 200mV |
Collector Base Voltage (VCBO) | 32V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 40 |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |