Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | 45V |
Max Power Dissipation | 50W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Current Rating | 8A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | BD533 |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 12MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 800mV |
Max Collector Current | 8A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 2A 2V |
Current - Collector Cutoff (Max) | 100μA |
Vce Saturation (Max) @ Ib, Ic | 800mV @ 600mA, 6A |
Collector Emitter Breakdown Voltage | 45V |
Transition Frequency | 12MHz |
Collector Base Voltage (VCBO) | 45V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 20 |
VCEsat-Max | 0.8 V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |