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BD676G

BD676G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-BD676G
  • Package: TO-225AA, TO-126-3
  • Datasheet: PDF
  • Stock: 772
  • Description: BD676G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) 260
Current Rating -4A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BD676
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 40W
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage 45V
Transition Frequency 200MHz
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 5V
hFE Min 750
Height 11.04mm
Length 7.74mm
Width 2.66mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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