Parameters | |
---|---|
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | 80V |
Max Power Dissipation | 40W |
Current Rating | 4A |
Base Part Number | BD679 |
Pin Count | 3 |
Number of Elements | 1 |
Polarity | NPN |
Element Configuration | Single |
Power Dissipation | 40W |
Case Connection | ISOLATED |
Transistor Application | SWITCHING |
Transistor Type | NPN - Darlington |
Collector Emitter Voltage (VCEO) | 80V |
Max Collector Current | 4A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A 3V |
Current - Collector Cutoff (Max) | 500μA |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A |
Collector Emitter Breakdown Voltage | 80V |
Transition Frequency | 10MHz |
Collector Emitter Saturation Voltage | 2.5V |
Collector Base Voltage (VCBO) | 80V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 750 |
Height | 11.05mm |
Length | 7.8mm |
Width | 2.9mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |