BD682S
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Number of Pins | 3 |
| Weight | 761mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -100V |
| Max Power Dissipation | 14W |
| Current Rating | -4A |
| Base Part Number | BD682 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power - Max | 14W |
| Transistor Application | SWITCHING |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A 3V |
| Current - Collector Cutoff (Max) | 500μA |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 3MHz |
| Collector Emitter Saturation Voltage | 2.5V |
| Max Breakdown Voltage | 22V |
| Collector Base Voltage (VCBO) | -100V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 750 |
| Continuous Collector Current | -4A |
| Height | 11mm |
| Length | 8mm |
| Width | 3.25mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
See Relate Datesheet
