banner_page

BD810

BD810 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-BD810
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 654
  • Description: BD810 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 90W
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -10A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 90W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 1.5MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.1V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 4A 2V
Current - Collector Cutoff (Max) 1mA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.1V @ 300mA, 3A
Collector Emitter Breakdown Voltage 80V
Current - Collector (Ic) (Max) 10A
Transition Frequency 1.5MHz
Collector Emitter Saturation Voltage 1.1V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good