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BDV65A-S

BDV65A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available at Feilidi


  • Manufacturer: Bourns Inc.
  • Nocochips NO: 103-BDV65A-S
  • Package: TO-218-3
  • Datasheet: PDF
  • Stock: 203
  • Description: BDV65A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available at Feilidi (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Supplier Device Package SOT-93
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 3.5W
Base Part Number BDV65
Number of Elements 1
Polarity NPN
Element Configuration Single
Power - Max 3.5W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 12A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 2V @ 20mA, 5A
Collector Emitter Breakdown Voltage 80V
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 12A
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
RoHS Status ROHS3 Compliant
See Relate Datesheet

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