Parameters | |
---|---|
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Weight | 1.8g |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Tube |
Published | 2000 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Additional Feature | LEADFORM OPTIONS ARE AVAILABLE |
Subcategory | Other Transistors |
Voltage - Rated DC | -100V |
Max Power Dissipation | 70W |
Peak Reflow Temperature (Cel) | 240 |
Current Rating | -10A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | BDX34 |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Polarity | PNP |
Element Configuration | Single |
Power Dissipation | 70W |
Case Connection | COLLECTOR |
Transistor Application | SWITCHING |
Transistor Type | PNP - Darlington |
Collector Emitter Voltage (VCEO) | 100V |
Max Collector Current | 10A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 3A 3V |
Current - Collector Cutoff (Max) | 500μA |
JEDEC-95 Code | TO-220AB |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 6mA, 3A |
Collector Emitter Breakdown Voltage | 100V |
Transition Frequency | 3MHz |
Collector Emitter Saturation Voltage | 2.5V |
Max Breakdown Voltage | 100V |
Collector Base Voltage (VCBO) | -100V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 750 |
Continuous Collector Current | 10A |
Radiation Hardening | No |
RoHS Status | Non-RoHS Compliant |
Lead Free | Lead Free |