BDX53C
| Parameters | |
|---|---|
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 100V |
| Max Power Dissipation | 60W |
| Current Rating | 8A |
| Base Part Number | BDX53 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 60W |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 8A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 3A 3V |
| Current - Collector Cutoff (Max) | 500μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 12mA, 3A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 20MHz |
| Collector Emitter Saturation Voltage | 2V |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 750 |
| Continuous Collector Current | 8A |
| Height | 15.95mm |
| Length | 10mm |
| Width | 4.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
