Parameters | |
---|---|
Surface Mount | YES |
Number of Terminals | 4 |
Transistor Element Material | SILICON |
JESD-609 Code | e3 |
Moisture Sensitivity Level (MSL) | 1 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | LOW NOISE |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-G4 |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | DUAL GATE, DEPLETION MODE |
Case Connection | SOURCE |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | N-CHANNEL |
Drain Current-Max (Abs) (ID) | 0.04A |
DS Breakdown Voltage-Min | 10V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Highest Frequency Band | ULTRA HIGH FREQUENCY B |
Power Gain-Min (Gp) | 20dB |
RoHS Status | RoHS Compliant |